Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898811· OSTI ID:22350986

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong ^[1]

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1. Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

• OSTI ID: 22350986
• Journal Information: Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CARBON
EQUIPMENT
FIELD EFFECT TRANSISTORS
HOLES
LAYERS
NANOPARTICLES
ORGANIC SEMICONDUCTORS
POLYSTYRENE
RETENTION
SPUTTERING
TRAPPING
TRAPS