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Title: Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.
Authors:
; ; ; ; ;  [1]
  1. Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)
Publication Date:
OSTI Identifier:
22350986
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON; EQUIPMENT; FIELD EFFECT TRANSISTORS; HOLES; LAYERS; NANOPARTICLES; ORGANIC SEMICONDUCTORS; POLYSTYRENE; RETENTION; SPUTTERING; TRAPPING; TRAPS