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Title: Broadband gain in poly(3-hexylthiophene):phenyl-C{sub 61}-butyric-acid-methyl-ester photodetectors enabled by a semicontinuous gold interlayer

Substantial broadband photoconductive gain has been realized for organic, thin-film photodetectors with a poly(3-hexylthiophene):phenyl-C{sub 61}-butyric-acid-methyl-ester (P3HT:PCBM) active layer at low bias voltages. External quantum efficiencies upwards of 1500% were achieved when a semicontinuous gold layer was introduced at the anode interface. Significant gain was also observed in the sub-band gap, near infrared region where the external quantum efficiency approached 100% despite the lack of a sensitizer. The gain response was highly dependent on the thickness of the active layer of the photodetector with the best results achieved with the thinnest devices. The gain is the result of the injection of secondary electrons due to hole charge trapping at the semicontinuous gold layer.
Authors:
;  [1]
  1. Institute for Micromanufacturing and Electrical Engineering Program, Louisiana Tech University, Ruston, Louisiana 71272 (United States)
Publication Date:
OSTI Identifier:
22350985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANODES; ELECTRIC POTENTIAL; ELECTRONS; EQUIPMENT; GAIN; GOLD; HOLES; INJECTION; INTERFACES; LAYERS; PHOTOCONDUCTIVITY; PHOTODETECTORS; QUANTUM EFFICIENCY; SENSITIZERS; THICKNESS; THIN FILMS; TRAPPING