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Title: Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes slow (∼10{sup 2} nm{sup 2}/s) patterning speeds. By contrast, using the STM in a high-voltage (>10 V) field-emission mode, patterning speeds can be increased by orders of magnitude to ≳10{sup 4} nm{sup 2}/s. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads for these devices. For nanoscale structures, we show that the resulting electrical transport is consistent with the donor incorporation chemistry constraining the electrical dimensions to a scale of 10 nm even though the pattering spot size is 40 nm.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22350982
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCURACY; ATOMS; DESORPTION; DOPED MATERIALS; ELECTRIC POTENTIAL; EQUIPMENT; FIELD EMISSION; NANOSTRUCTURES; PHOSPHORUS ADDITIONS; SCANNING TUNNELING MICROSCOPY; SILICON; TRANSISTORS; TUNNEL EFFECT