Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898571· OSTI ID:22350981

Panda, Kalpataru; Inami, Eiichi; Sugimoto, Yoshiaki ^[1]; Sankaran, Kamatchi J.; Tai, Nyan Hwa ^[2]; Lin, I-Nan ^[3]

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1. Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan)
2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
3. Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

• OSTI ID: 22350981
• Journal Information: Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CURRENT DENSITY
CURRENTS
DENSITY
DIAMONDS
ELECTRIC POTENTIAL
ELECTRON EMISSION
ELECTRONS
FIELD EMISSION
FILMS
GRAIN BOUNDARIES
ION IMPLANTATION
NANOPARTICLES
PHYSICAL RADIATION EFFECTS
PLATINUM IONS
RESOLUTION
SPECTROSCOPY
TUNNEL EFFECT