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Title: Wide bandgap engineering of (AlGa){sub 2}O{sub 3} films

Bandgap tunable (AlGa){sub 2}O{sub 3} films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa){sub 2}O{sub 3} films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa){sub 2}O{sub 3} films increases continuously with the Al content covering the whole Al content range from about 5 to 7‚ÄČeV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa){sub 2}O{sub 3} films.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)
  2. Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
Publication Date:
OSTI Identifier:
22350955
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; COVERINGS; CRYSTAL GROWTH; ENERGY BEAM DEPOSITION; ENERGY LOSSES; EV RANGE; FILMS; GALLIUM OXIDES; LASER RADIATION; PULSED IRRADIATION; SAPPHIRE; SPECTRA; SPECTROPHOTOMETERS; SUBSTRATES; X-RAY PHOTOELECTRON SPECTROSCOPY