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Title: Stable and metastable Si negative-U centers in AlGaN and AlN

Electron paramagnetic resonance studies of Si-doped Al{sub x}Ga{sub 1−x}N (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |E{sub DX}| of the negatively charged state DX{sup −}, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas E{sub DX} remains to be close to the neutral charge state E{sub d} for the metastable DX center (∼11 meV below E{sub d} in AlN).
Authors:
; ; ; ; ;  [1]
  1. Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22350954
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; CHARGE STATES; DOPED MATERIALS; ELECTRON SPIN RESONANCE; GALLIUM NITRIDES; SILICON ADDITIONS; U CENTERS