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Title: Schottky contact by Ag on In{sub 2}O{sub 3} (111) single crystals

The barrier height of a metal-semiconductor contact was studied by means of angle-resolved photoemission spectroscopy, which was implemented through stepwise Ag deposition on the ultra-high vacuum cleaved (111) surface of melt-grown In{sub 2}O{sub 3} single crystals. A small Schottky barrier height of 0.22 ± 0.08 eV was determined by following the band bending of the valence band and core level spectra with Ag thickness and corrected for the photovoltage effect. In addition, the work function of Ag and the electron affinity of In{sub 2}O{sub 3} were measured in situ to be 4.30 ± 0.05 eV and 4.18 ± 0.06 eV, respectively. Agreement was observed when comparing the barrier height from band bending to the calculated one by applying the Schottky-Mott rule, yielding a value of 0.12 ± 0.11 eV. Due to an additionally appearing photovoltage, an explicit reference to the surface electron accumulation layer is not necessary when discussing the Schottky character of the Ag/In{sub 2}O{sub 3} contact.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, D−12489 Berlin (Germany)
  2. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22350953
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; ELECTRIC CONTACTS; ELECTRONS; INDIUM OXIDES; LAYERS; MONOCRYSTALS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SILVER; SPECTRA; SPECTROSCOPY; SURFACES; THICKNESS; VALENCE; WORK FUNCTIONS