Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898070· OSTI ID:22350952

Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu ^[1]

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1. Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

• OSTI ID: 22350952
• Journal Information: Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
DISLOCATIONS
ELECTRON DENSITY
ELECTRON MOBILITY
GALLIUM NITRIDES
GRAPHENE
HETEROJUNCTIONS
INTERFACES
ROUGHNESS
SCATTERING
SURFACES
TWO-DIMENSIONAL CALCULATIONS