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Title: Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.
Authors:
; ; ; ; ; ;  [1]
  1. Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)
Publication Date:
OSTI Identifier:
22350952
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DISLOCATIONS; ELECTRON DENSITY; ELECTRON MOBILITY; GALLIUM NITRIDES; GRAPHENE; HETEROJUNCTIONS; INTERFACES; ROUGHNESS; SCATTERING; SURFACES; TWO-DIMENSIONAL CALCULATIONS