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Title: Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [2] ;  [3]
  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083 (China)
  2. Materials Engineering, The University of Queensland, St. Lucia, Brisbane, Queensland 4072 (Australia)
  3. (Australia)
Publication Date:
OSTI Identifier:
22350951
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH; CATALYSTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSION LENGTH; DROPLETS; GALLIUM ARSENIDES; GOLD; INTERFACES; MOLECULAR BEAM EPITAXY; NANOWIRES; QUANTUM WIRES; SUPERSATURATION; SURFACES; ZINC SULFIDES