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Title: Optical nonlinearities and carrier dynamics in Fe doped GaN single crystal

Optical nonlinearities and transient dynamics of Fe doped GaN (GaN:Fe) were studied by Z-scan and pump-probe with phase object techniques under picosecond and nanosecond at 532 nm. From the pump-probe results, an additional decay pathway subsequent to two photon excitation was observed due to the carrier trapping of Fe{sup 3+}/Fe{sup 2+} deep acceptors. The trapping state in the band gap results in a pronounced modulation to nonlinear responses of GaN:Fe compared to that of undoped GaN. With an effective three-level model as well as carrier trapping effect we described the photo-physical dynamics in GaN:Fe unambiguously.
Authors:
; ; ;  [1] ; ;  [2] ;  [1] ;  [3]
  1. College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006 (China)
  2. Department of Physics, Harbin Institute of Technology, Harbin 15001 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22350948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; DECAY; DOPED MATERIALS; EXCITATION; GALLIUM NITRIDES; IRON ADDITIONS; MODULATION; MONOCRYSTALS; NONLINEAR PROBLEMS; OPTICAL PUMPING; PHOTONS; TRANSIENTS; TRAPPING