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Title: Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH{sub 4}F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Q{sub fix}) and density of interface states (D{sub it}) in the range of (4–6) × 10{sup 10 }cm{sup −2} and (2–12) × 10{sup 10 }eV{sup −1 }cm{sup −2}, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.
Authors:
; ; ; ;  [1] ; ;  [1] ;  [2] ;  [3] ;  [4] ; ;  [4] ;  [2]
  1. Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
  3. Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation)
  4. Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090 (Russian Federation)
Publication Date:
OSTI Identifier:
22350944
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMMONIUM FLUORIDES; CAPACITORS; DENSITY; DISPERSIONS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTROLYTES; FERMI LEVEL; FLUORINE; INDIUM ARSENIDES; INTERFACES; LAYERS; METALS; OXIDATION; OXYGEN; PASSIVATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SUBSTRATES