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Title: Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm

The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm{sup 2} at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase with current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)
  2. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
Publication Date:
OSTI Identifier:
22350943
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APERTURES; CONVERSION; CURRENT DENSITY; EFFICIENCY; EQUIPMENT; GALLIUM ANTIMONIDES; IMPURITIES; INDIUM ARSENIDES; INTERFACES; LAYERS; QUANTUM WELLS; RECOMBINATION; SCATTERING; SEMICONDUCTOR LASERS; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THRESHOLD CURRENT; TUNNEL EFFECT