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Title: High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.
Authors:
; ; ;  [1] ;  [1] ;  [2] ; ;  [3]
  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
  2. (Germany)
  3. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)
Publication Date:
OSTI Identifier:
22350936
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; BRIGHTNESS; CRYSTALS; EQUIPMENT; GHZ RANGE; MODE LOCKING; PULSES; SEMICONDUCTOR LASERS