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Title: Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change Random Access Memory (PCRAM). By tuning N-TiW's material properties through doping, the heater can be tailored to optimize the access speed and programming current of PCRAM. Experiments reveal that N-TiW's resistivity increases and thermal conductivity decreases with increasing nitrogen-doping ratio, and N-TiW devices displayed (∼33% to ∼55%) reduced programming currents. However, there is a tradeoff between the current and speed for heater-based PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could be optimized to enable low RESET currents and fast access speeds.
Authors:
 [1] ; ;  [2] ;  [3]
  1. Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
  2. Singapore University of Technology and Design, 20 Dover Drive Singapore 138682 (Singapore)
  3. Optical Memory National Engineering Research Center, Department of Precision Instrument, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22350924
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; DOPED MATERIALS; EQUIPMENT; HEATERS; NITROGEN ADDITIONS; RANDOMNESS; THERMAL CONDUCTIVITY; TITANIUM ALLOYS; TUNGSTEN ALLOYS; TUNING; VELOCITY