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Title: Catalyst-free growth of Bi{sub 2}Te{sub 3} nanostructures by molecular beam epitaxy

We present the catalyst-free growth of binary Bi{sub 2}Te{sub 3} topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180 °C to 260 °C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi{sub 2}Te{sub 3} thin film gives an insight into the growth mechanism.
Authors:
 [1] ;  [2] ; ;  [3] ; ;  [1]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. (United Kingdom)
  3. Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU (United Kingdom)
Publication Date:
OSTI Identifier:
22350922
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH TELLURIDES; CATALYSTS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NANOSTRUCTURES; SAPPHIRE; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; TOPOLOGY