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Title: Ambipolar quantum dots in intrinsic silicon

We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.
Authors:
; ;  [1] ;  [2]
  1. Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
  2. Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
Publication Date:
OSTI Identifier:
22350921
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE STATES; ELECTRIC CONTACTS; ELECTRONS; EQUIPMENT; NOISE; QUANTUM DOTS; SILICON; TUNNEL EFFECT