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Title: Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Dipartimento di Ingegneria Civile e Ambientale, Università di Perugia, UdR INSTM, Strada di Pentima 4, 05100 Terni (Italy)
  2. (Spain)
Publication Date:
OSTI Identifier:
22350920
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AQUEOUS SOLUTIONS; CELLULOSE; CRYSTALS; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRONIC EQUIPMENT; GRAPHENE; MEMORY DEVICES; METALS; NANOSTRUCTURES; OXIDES; SILICON; STORAGE; SUSTAINABILITY; THIN FILMS