Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films
- Dipartimento di Ingegneria Civile e Ambientale, Università di Perugia, UdR INSTM, Strada di Pentima 4, 05100 Terni (Italy)
With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.
- OSTI ID:
- 22350920
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Colossal Electroresistive Properties Of CSD Grown Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} Films For Nonvolatile Memory Applications
Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack