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Title: Mechanical property changes in porous low-k dielectric thin films during processing

The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [3]
  1. Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  3. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
22350911
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CHARGES; COPPER; DIELECTRIC MATERIALS; MECHANICAL PROPERTIES; PERMITTIVITY; POROSITY; POROUS MATERIALS; PROCESSING; RESONANCE; THIN FILMS