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Title: Observation of strongly enhanced inverse spin Hall voltage in Fe{sub 3}Si/GaAs structures

We performed spin pumping experiment on high quality, epitaxial Fe{sub 3}Si/GaAs structures grown by molecular beam epitaxy. By tailoring the thickness and doping (n, p) level of the conducting GaAs epi-layer, thermal heating common of ferromagnetic metal/semiconductor heterostructure was removed effectively. A large inverse spin Hall Effect (ISHE) voltage up to 49.2 μV was observed for Fe{sub 3}Si/p-GaAs. Smaller ISHE voltage (V{sub ISHE}) by a factor of ∼0.4 was obtained for Fe{sub 3}Si/n-GaAs, as scaled with its resistivity. By taking into account of the “self-induced” ISHE apparently observed in our samples, the minimum value of spin Hall angle θ{sub ISHE} for n-GaAs and p-GaAs was estimated to be 1.9 × 10{sup −4} and 2.8 × 10{sup −5}, respectively.
Authors:
;  [1] ;  [2] ; ; ;  [3] ;  [4] ;  [5]
  1. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  3. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  4. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)
  5. Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China)
Publication Date:
OSTI Identifier:
22350908
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; HALL EFFECT; HEATING; IRON SILICIDES; LAYERS; METALS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SPIN; THICKNESS