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Title: Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.
Authors:
; ; ; ;  [1] ;  [1] ;  [2]
  1. Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France)
  2. (Sweden)
Publication Date:
OSTI Identifier:
22350905
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRODES; EPITAXY; FABRICATION; FILMS; GRAPHENE; HETEROJUNCTIONS; INTERFACES; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; NICKEL; PHONONS; SEMICONDUCTOR JUNCTIONS; SPIN; TUNNEL EFFECT