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Title: Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The keymore » founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.« less
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [3]
  1. School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)
  2. Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711 (Korea, Republic of)
  3. Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22350900
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; DENSITY; ELECTRIC POTENTIAL; ILLUMINANCE; INDIUM OXIDES; INSTABILITY; INTRINSIC FACTOR; OXYGEN IONS; PEROXIDES; SEMICONDUCTOR MATERIALS; SIMULATION; STRESSES; THICKNESS; THIN FILMS; TIN OXIDES; TRANSISTORS; VACANCIES; VALENCE; ZINC OXIDES