skip to main content

SciTech ConnectSciTech Connect

Title: Electrical characteristics of multilayer MoS{sub 2} transistors at real operating temperatures with different ambient conditions

Atomically thin, two-dimensional (2D) materials with bandgaps have attracted increasing research interest due to their promising electronic properties. Here, we investigate carrier transport and the impact of the operating ambient conditions on back-gated multilayer MoS{sub 2} field-effect transistors with a thickness of ∼50 nm at their realistic working temperatures and under different ambient conditions (in air and in a vacuum of ∼10{sup −5} Torr). Increases in temperature cause increases in I{sub min} (likely due to thermionic emission at defects), and result in decreased I{sub on} at high V{sub G} (likely due to increased phonon scattering). Thus, the I{sub on}/I{sub min} ratio decreases as the temperature increases. Moreover, the ambient effects with working temperatures on field effect mobilities were investigated. The adsorbed oxygen and water created more defect sites or impurities in the MoS{sub 2} channel, which can lead another scattering of the carriers. In air, the adsorbed molecules and phonon scattering caused a reduction of the field effect mobility, significantly. These channel mobility drop-off rates in air and in a vacuum reached 0.12 cm{sup 2}/V s K and 0.07 cm{sup 2}/V s K, respectively; the rate of degradation is steeper in air than in a vacuum due to enhanced phonon mode by the adsorbedmore » oxygen and water molecules.« less
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)
  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
  3. Department of Electronics and Radio Engineering, Kyung Hee University, Yongin, Gyeonggi 446-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22350899
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CARRIERS; DEFECTS; ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTORS; LAYERS; MOLECULES; MOLYBDENUM SULFIDES; OXYGEN; PHONONS; SCATTERING; THERMIONIC EMISSION; THICKNESS; TWO-DIMENSIONAL CALCULATIONS; WATER