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Title: Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effect of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. Data Storage Institute, Agency for Science Technology and Research (A-STAR), 5 Engineering Drive 1, 117608 (Singapore)
  3. Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)
Publication Date:
OSTI Identifier:
22350898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ANNIHILATION; BINDING ENERGY; DEPOSITION; FILMS; GALLIUM NITRIDES; GALLIUM OXIDES; INTERFACES; LAYERS; REDUCTION; RESOLUTION; SURFACES; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES