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Title: Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 20–40 nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1 nm and 5 nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.
Authors:
;  [1] ; ; ; ;  [2] ; ; ; ;  [3]
  1. Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen (Germany)
  2. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)
  3. Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen (Germany)
Publication Date:
OSTI Identifier:
22350896
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONFIGURATION INTERACTION; DISTRIBUTION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS; RED SHIFT; RESOLUTION; SPECTRA; STRAINS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; WAVELENGTHS