skip to main content

SciTech ConnectSciTech Connect

Title: Largely defocused probe scanning transmission electron microscopy for imaging local modulation of strain field in a hetero interface

We present an innovative method for characterizing the strain field in three dimensions in a hetero interface. Largely defocused probe scanning transmission electron microscopy (LDP-STEM) was employed for imaging the inhomogeneous strain field in a germanium (Ge) layer deposited on a silicon (Si) substrate. In the LDP-STEM image, Ge-atomic columns that are relaxed or strained to the Si substrate in the Si/Ge hetero interface were observed to be distinguishable, allowing for the qualitative characterization of the coherency of the crystal growth. Our results revealed that the strain field is locally modulated along the in-plane direction in the Si/Ge hetero interface.
Authors:
; ; ; ;  [1] ;  [2]
  1. Memory Analysis Science and Engineering Group, Samsung Electronics, San #16 Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of)
  2. School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)
Publication Date:
OSTI Identifier:
22350886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; GERMANIUM; INTERFACES; LAYERS; MODULATION; SILICON; STRAINS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY