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Title: Surfactant role of Ag atoms in the growth of Si layers on Si(111)√3×√3-Ag substrates

The growth of Si layers on Si(111)√3×√3-Ag substrates was studied for coverages of up to a few mono-layers. Atomically flat islands were observed to nucleate in the growth at 570 K. The top surfaces of the islands were covered in Ag atoms and exhibited a √3×√3 reconstruction with the same surface state dispersions as Si(111)√3×√3-Ag substrates. These results indicate that the Ag atoms on the substrate always hop up to the top of the Si layers.
Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502 (Japan)
Publication Date:
OSTI Identifier:
22350885
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ATOMS; CRYSTAL GROWTH; DISPERSIONS; HOLMIUM PHOSPHIDES; LAYERS; SILICON; SILVER; SUBSTRATES; SURFACES; SURFACTANTS