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Title: High temperature terahertz response in a p-type quantum dot-in-well photodetector

Terahertz (THz) response observed in a p-type InAs/In{sub 0.15}Ga{sub 0.85}As/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while strong THz responses up to ∼4.28 THz is observed at higher temperatures (∼100–130 K). Responsivity and specific detectivity at 9.2 THz (32.6 μm) under applied bias of −0.4 V at 130 K are ∼0.3 mA/W and ∼1.4 × 10{sup 6} Jones, respectively. Our results demonstrate the potential use of p-type DWELL in developing high operating temperature THz devices.
Authors:
; ;  [1] ; ;  [2] ; ; ; ;  [3]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
  2. Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
  3. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
Publication Date:
OSTI Identifier:
22350882
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EQUIPMENT; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTODETECTORS; P-TYPE CONDUCTORS; QUANTUM DOTS; THZ RANGE