1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

Journal Article · Mon Oct 13 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898010· OSTI ID:22350880

Posilovic, K.; Kalosha, V. P.; Rosales, R.; Bimberg, D. ^[1]; Kettler, T. ^[1]; Skoczowsky, D. ^[2]; Pohl, J.; Weyers, M. ^[3]

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1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)
2. PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany)
3. Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{sup −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.

• OSTI ID: 22350880
• Journal Information: Applied Physics Letters, Vol. 105, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
BRIGHTNESS
CRYSTAL DEFECTS
EMISSION
OPTICAL MODES
OPTICAL PROPERTIES
QUALITY FACTOR
SEMICONDUCTOR LASERS
WAVEGUIDES