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Title: Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4] ; ;  [2] ;  [5] ;  [2] ;  [4]
  1. RBNI and Chemical Engineering Department, Technion, 3200003 Haifa (Israel)
  2. CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain)
  3. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay (France)
  4. (Argentina)
  5. (Spain)
Publication Date:
OSTI Identifier:
22350868
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COBALT; CURRENTS; ELECTRIC POTENTIAL; EQUIPMENT; HYSTERESIS; INTERFACES; LAYERS; MEMORY DEVICES; NANOPARTICLES; SOL-GEL PROCESS; TITANIUM OXIDES