skip to main content

SciTech ConnectSciTech Connect

Title: Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.
Authors:
; ; ;  [1] ;  [1] ;  [2] ; ; ;  [3] ; ; ;  [4]
  1. Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
  2. (China)
  3. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)
  4. Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan, Taiwan (China)
Publication Date:
OSTI Identifier:
22350867
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; DIELECTRIC MATERIALS; DISSOCIATION; ELECTRON BEAM INJECTION; ELECTRON-ELECTRON INTERACTIONS; ELECTRONS; EQUIPMENT; INJECTION; INTERFACES; METALS; MOS TRANSISTORS; MOSFET; NANOSTRUCTURES; N-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TRAPPING