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Title: Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors

Cu(In,Ga)Se{sub 2} thin film transistors are demonstrated with the on-off ratio of ∼10{sup 3} and the saturation hole mobility of 1.8 cm{sup 2}/V-s. Due to the high hole concentration (∼5 × 10{sup 17 }cm{sup −3}), the channel needs to be etched to turn off for the accumulation mode operation. The Cu(In,Ga)Se{sub 2} film after etching reveals a larger mobility, and a narrower (112) X-ray diffraction line than the original thick layer, indicating the better crystallinity of the initial growth as compared to the subsequent Cu(In,Ga)Se{sub 2} layer. Both the hole concentration and the saturation mobility increase with the decreasing Cu/(In + Ga) ratio probably due to the effect of Cu vacancies.
Authors:
 [1] ;  [2]
  1. Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)
  2. Graduate Institute of Electronics Engineering, Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan and National Nano Device Labs, Hsinchu, Taiwan (China)
Publication Date:
OSTI Identifier:
22350865
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER SELENIDES; ETCHING; FABRICATION; GALLIUM COMPOUNDS; HOLE MOBILITY; HOLES; INDIUM COMPOUNDS; LAYERS; SATURATION; THIN FILMS; TRANSISTORS; X-RAY DIFFRACTION