Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4897407· OSTI ID:22350865

Zhu, Xiaobo ^[1]

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1. Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

Cu(In,Ga)Se{sub 2} thin film transistors are demonstrated with the on-off ratio of ∼10{sup 3} and the saturation hole mobility of 1.8 cm{sup 2}/V-s. Due to the high hole concentration (∼5 × 10{sup 17 }cm{sup −3}), the channel needs to be etched to turn off for the accumulation mode operation. The Cu(In,Ga)Se{sub 2} film after etching reveals a larger mobility, and a narrower (112) X-ray diffraction line than the original thick layer, indicating the better crystallinity of the initial growth as compared to the subsequent Cu(In,Ga)Se{sub 2} layer. Both the hole concentration and the saturation mobility increase with the decreasing Cu/(In + Ga) ratio probably due to the effect of Cu vacancies.

• OSTI ID: 22350865
• Journal Information: Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER SELENIDES
ETCHING
FABRICATION
GALLIUM COMPOUNDS
HOLE MOBILITY
HOLES
INDIUM COMPOUNDS
LAYERS
SATURATION
THIN FILMS
TRANSISTORS
X-RAY DIFFRACTION