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Title: Height control of self-assembled quantum dots by strain engineering during capping

Strain engineering during the capping of III-V quantum dots has been explored as a means to control the height of strained self-assembled quantum dots. Results of Kinetic Monte Carlo simulations are confronted with cross-sectional Scanning Tunnel Microscopy (STM) measurements performed on InAs quantum dots grown by molecular beam epitaxy. We studied InAs quantum dots that are capped by In{sub x}Ga{sub (1−x)}As layers of different indium compositions. Both from our realistic 3D kinetic Monte Carlo simulations and the X-STM measurements on real samples, a trend in the height of the capped quantum dot is found as a function of the lattice mismatch between the quantum dot material and the capping layer. Results obtained on additional material combinations show a generic role of the elastic energy in the control of the quantum dot morphology by strain engineering during capping.
Authors:
;  [1] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven (Netherlands)
  2. Department of Mathematics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  3. (Australia)
  4. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Avenida Complutense 30, 28040 Madrid (Spain)
Publication Date:
OSTI Identifier:
22350861
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; CONTROL; CRYSTAL DEFECTS; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHOD; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; STRAINS