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Title: Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm

To suppress short channel effects, lower off-state leakage current and enhance gate coupling efficiency, InAs nanowires (NWs) with diameter smaller than 10 nm could be needed in field-effect transistors (FETs) as the channel length scales down to tens of nanometers to improve the performance and increase the integration. Here, we fabricate and study FETs based on ultrathin wurtzite-structured InAs NWs, with the smallest NW diameter being 7.2 nm. The FETs based on ultrathin NWs exhibit high I{sub on}/I{sub off} ratios of up to 2 × 10{sup 8}, small subthreshold swings of down to 120 mV/decade, and operate in enhancement-mode. The performance of the devices changes as a function of the diameter of the InAs NWs. The advantages and challenges of the FETs based on ultrathin NWs are discussed.
Authors:
; ; ; ; ;  [1] ; ;  [2]
  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
  2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22350859
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COUPLING; EFFICIENCY; EQUIPMENT; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDES; LEAKAGE CURRENT; NANOWIRES; QUANTUM WIRES