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Title: Studies on Nd{sub x}In{sub 1−x}O{sub 3} semiconducting thin films prepared by rf magnetron sputtering

Neodymium-substituted indium oxide (Nd{sub x}In{sub 1−x}O{sub 3}, NIO) semiconducting thin films fabricated by rf sputtering were investigated. It was found that the incorporation of Nd atoms would lead to broadening the optical band gap, suppressing the grain growth, and reducing the free carrier concentration. The field-effect transistors with different NIO (5%, 15%, and 25% Nd concentration of the targets) channel layers exhibited similar electrical stability under positive gate-bias-stress, but the ones with 15% and 25% Nd concentration displayed much better stability under negative gate-bias-stress. Detailed studies showed that the content of |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}> electron configuration decreased as the Nd concentration increased, resulting in the reduction of holes during negative-bias-stress. And the reduction of the |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}> content as the Nd concentration increased was ascribed to less overlap between the metal and ligand orbitals arose from large lattice expansion.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China)
Publication Date:
OSTI Identifier:
22350852
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CONCENTRATION RATIO; ELECTRONS; EXPANSION; FIELD EFFECT TRANSISTORS; GRAIN GROWTH; HOLES; INDIUM COMPOUNDS; LAYERS; LIGANDS; MAGNETRONS; NEODYMIUM COMPOUNDS; NICKEL OXIDES; OPTICAL PROPERTIES; OXYGEN COMPOUNDS; SPUTTERING; STABILITY; THIN FILMS