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Title: Current oscillations as a manifestation of spatio-temporal inhomogeneity of temperature distribution in vanadium dioxide films at semiconductor-metal phase transition

A spatial temperature distribution in VO{sub 2} film was first investigated at current oscillations using infrared microscope. The oscillations are revealed to arise from the periodic formation and disappearance of a narrow high-temperature channel in VO{sub 2} film. The nature of the oscillations in VO{sub 2} films is considered from the standpoint of a well-known phenomenon: spatio-temporal instability of current flow in homogeneous semiconductors. The temperature of the channel significantly exceeds the semiconductor-metal transition temperature being the cause of film destruction and oscillations cessation.
Authors:
; ; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentyev Aven., 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22350850
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; FILMS; METALS; MICROSCOPES; OSCILLATIONS; PERIODICITY; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DISTRIBUTION; TRANSITION TEMPERATURE; VANADIUM OXIDES