skip to main content

Title: A crystalline oxide passivation for Al{sub 2}O{sub 3}/AlGaN/GaN

In situ X-ray photoelectron spectroscopy and low energy electron diffraction are performed to study the formation of a crystalline oxide on the AlGaN surface. The oxidation of the AlGaN surface is prepared by annealing and remote N{sub 2} + O{sub 2} plasma pretreatments resulting in a stable crystalline oxide. The impact of the oxide on the interface state density is studied by capacitance voltage (C-V) measurements. It is found that a remote plasma exposure at 550 °C shows the smallest frequency dispersion. Crystalline oxide formation may provide a novel passivation method for high quality AlGaN/GaN devices.
Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22350846
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; ANNEALING; CAPACITANCE; DENSITY; DISPERSIONS; ELECTRON DIFFRACTION; GALLIUM NITRIDES; INTERFACES; OXIDATION; PASSIVATION; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY