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Title: Dynamic characteristics of undoped and p-doped Fabry-Perot InAs/InP quantum dash based ridge waveguide lasers for access/metro networks

In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm{sup −1} is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France)
  2. III-V Lab, A Joint Laboratory of Alcatel Lucent Bell Laboratories, Thales Research and Technology and CEA-LETI, Route de Nozay, 91460 Marcoussis (France)
Publication Date:
OSTI Identifier:
22350845
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; GAIN; GHZ RANGE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; MODULATION; P-TYPE CONDUCTORS; WAVEGUIDES