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Title: Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ∼1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200 MHz.
Authors:
; ; ;  [1]
  1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)
Publication Date:
OSTI Identifier:
22350844
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CORRELATIONS; ELECTRICAL PUMPING; EXCITATION; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIFETIME; PHOTON EMISSION; PHOTONS; QUANTUM DOTS; RECOMBINATION; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K