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Title: Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm{sup 2} and 95 kW/cm{sup 2} at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.
Authors:
; ; ; ; ; ;  [1] ; ; ; ; ;  [2] ; ; ; ;  [3]
  1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States)
  2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)
  3. Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623 (Germany)
Publication Date:
OSTI Identifier:
22350842
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; EPITAXY; GALLIUM NITRIDES; LASER MATERIALS; LAYERS; OPTICAL PUMPING; POLARIZATION; QUANTUM WELLS; SAPPHIRE; STIMULATED EMISSION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION; WAVELENGTHS