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Title: InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22350840
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; GALLIUM NITRIDES; HOLES; IMPURITIES; INDIUM COMPOUNDS; INJECTION; INTERFACES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; ORGANOMETALLIC COMPOUNDS; PLASMA; P-N JUNCTIONS; SEMICONDUCTOR JUNCTIONS; TUNNEL EFFECT; VISIBLE RADIATION; VOLTAGE DROP