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Title: Diamond Schottky diodes with ideality factors close to 1

The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (ϕ{sub B}) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure. An exponential drop of ϕ{sub B} in time at 600 K and its stabilization at 1.46 eV after 90 min were reported. The lowest n among SBDs examined was close to 1.0 at 600 K. A linear relation between ϕ{sub B} and n in a statistical electrical characterization suggests a ϕ{sub B} inhomogeneity.
Authors:
; ;  [1]
  1. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22350832
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DIAMONDS; ELECTRIC POTENTIAL; EV RANGE; SCHOTTKY BARRIER DIODES; STABILIZATION; TUNGSTEN CARBIDES