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Title: Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts

A gate assisted Kelvin test structure based on Si nanowire field effect transistors has been designed and fabricated for the characterization of the transistor source/drain contacts. Because the Si nanowire field effect transistors exhibit ambipolar characteristics with electron current slightly lower than the hole current, we can select the type of carriers (electrons or holes) flowing through the same contacts and adjust the current by the applied gate voltage. In this way, we are able to measure the characteristics of the same contact with either pure electron or hole flow. In addition, we found that the nanowire contacts behave very differently depending on the current flow directions. This indicates that the source and drain contact resistance can be dramatically different. Such a gate assisted Kelvin Test structure will lead to future metrology and applications in nanoelectronics.
Authors:
;  [1] ;  [2] ; ; ;  [1] ; ;  [3]
  1. Electrical and Computer Engineering Department, George Mason University, Fairfax, Virginia 22030 (United States)
  2. (United States)
  3. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899 (United States)
Publication Date:
OSTI Identifier:
22350831
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIERS; CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; HOLES; NANOELECTRONICS; NANOWIRES