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Title: High temperature study of flexible silicon-on-insulator fin field-effect transistors

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (I{sub ds}), gate leakage current (I{sub gs}), transconductance (g{sub m}), and extracted low-field mobility (μ{sub 0}). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.
Authors:
; ; ;  [1]
  1. Integrated Nanotechnology Lab, Electrical Engineering, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22350828
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; DIELECTRIC MATERIALS; EQUIPMENT; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENT; METALS; PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K