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Title: Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation

We have studied the effect of Ga ion irradiation on the controllable hysteretic behavior of graphene field effect transistors fabricated on Si/SO{sub 2} substrates. The various densities of defects in graphene were monitored by Raman spectrum. It was found that the Dirac point shifted to the positive gate voltage constantly, while the hysteretic behavior was enhanced first and then weakened, with the dose of ion irradiation increasing. By contrasting the trap charges density induced by dopant and the total density of effective trap charges, it demonstrated that adsorbate doping was not the decisive factor that induced the hysteretic behavior. The tunneling between the defect sites induced by ion irradiation was also an important cause for the hysteresis.
Authors:
 [1] ;  [2] ; ;  [1]
  1. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22350826
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE DENSITY; DEFECTS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM IONS; GRAPHENE; HYSTERESIS; ION BEAMS; IRRADIATION; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RAMAN SPECTRA; SUBSTRATES; SULFUR DIOXIDE; TRAPS; TUNNEL EFFECT