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Title: Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.
Authors:
;  [1] ; ; ; ;  [2]
  1. Department of Electronic Engineering, University of Rome Tor Vergata, 00133 Rome (Italy)
  2. OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg (Germany)
Publication Date:
OSTI Identifier:
22350825
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; CURRENTS; ELECTRIC CONDUCTIVITY; EMISSION; EQUIPMENT; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM WELLS; TRAPS; TUNNEL EFFECT; WAVELENGTHS