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Title: Graphene in proximity to magnetic insulating LaMnO{sub 3}

Proximity to functional substrates may enhance the coupling between the quantum degrees of freedom and thus develop nontrivial quantum effects in graphene. Here, we demonstrate the successful fabrication of graphene in proximity to atomically flat magnetic insulating LaMnO{sub 3} films. The insulating nature of the LaMnO{sub 3} films not only ensures the electronic transport only occur in the graphene layers but also allow them to serve as dielectric layers for gating. Transport measurements reveal anomalous behaviors, including asymmetrical longitudinal magnetoresistivity and nonlinear Hall effect. This work may pave a way toward the realization of intriguing quantum phases in graphene.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Hefei National Laboratory for Physical Sciences at the Microscale (HFNL) and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  2. Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China)
  3. (ICQD), HFNL, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  4. (China)
Publication Date:
OSTI Identifier:
22350820
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; DEGREES OF FREEDOM; DIELECTRIC MATERIALS; FABRICATION; FILMS; GRAPHENE; HALL EFFECT; LANTHANUM COMPOUNDS; LAYERS; MAGNETORESISTANCE; MANGANATES; NONLINEAR PROBLEMS; SUBSTRATES