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Title: Electrical detection of spin hyperpolarization in InP

The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ{sub 0}H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.
Authors:
;  [1]
  1. Laboratoire de Physique des Matériaux Nanostructurés, École Polytechnique Fédérale de Lausanne EPFL, 1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22350819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; DETECTION; EQUIPMENT; HELICITY; INDIUM PHOSPHIDES; IRON; IRON ADDITIONS; OPTICAL PUMPING; OXIDES; SENSORS; SPIN ORIENTATION; SURFACES; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0273-0400 K