skip to main content

SciTech ConnectSciTech Connect

Title: Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.
Authors:
 [1] ; ;  [2] ; ;  [3] ; ;  [4] ;  [5]
  1. Thin Films and Physics of Nanostructures, Bielefeld University, Universitaetsstrasse 25, 33615 Bielefeld (Germany)
  2. Institute of Applied Physics, Universität Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany)
  3. Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
  4. 4. Physikalisches Institut, Georg-August University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)
  5. Thin Films and Physics of Nanostructures, Universitaetsstrasse 25, 33615 Bielefeld, Germany, and Institut für Physik, Johannes Gutenberg Universität Mainz, Staudingerweg 9, 55128 Mainz (Germany)
Publication Date:
OSTI Identifier:
22350804
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CURRENTS; DEPOSITION; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HAFNIUM OXIDES; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MAGNETRONS; POLYCRYSTALS; RESOLUTION; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT