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Title: Strain induced ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films integrated on Si(001)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4896975· OSTI ID:22350801
; ;  [1]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

We report on the epitaxial growth and magnetic properties of antiferromagnetic and magnetoelectric (ME) Cr{sub 2}O{sub 3} thin films deposited on cubic yttria stabilized zirconia (c-YSZ)/Si(001) using pulsed laser deposition. The X-ray diffraction (2ϴ and Φ) and TEM characterizations confirm that the films were grown epitaxially. The Cr{sub 2}O{sub 3}(0001) growth on YSZ(001) occurs with twin domains. There are four domains of Cr{sub 2}O{sub 3} with in-plane rotation of 30° or 150° from each other about the [0001] growth direction. The epitaxial relation between the layers is given as [001]Si ‖ [001]YSZ ‖ [0001]Cr{sub 2}O{sub 3} and [100]Si ǁ [100]YSZ ǁ [101{sup ¯}0] Cr{sub 2}O{sub 3} or [112{sup ¯}0] Cr{sub 2}O{sub 3}. Though the bulk Cr{sub 2}O{sub 3} is an antiferromagnetic with T{sub N} = 307 K, we found that the films exhibit ferromagnetic like hysteresis loops with high saturation and finite coercive field up to 400 K. The thickness dependent magnetizations together with oxygen annealing results suggest that the ferromagnetism (FM) is due to oxygen related defects whose concentration is controlled by strain present in the films. This FM, in addition to the intrinsic magneto-electric properties of Cr{sub 2}O{sub 3}, opens the door to relevant spintronics applications.

OSTI ID:
22350801
Journal Information:
Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English